# US 2022/0033682 A1 · Cmp composition including anionic and cationic inhibitors > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0033682 A1 - Document ID: US20220033682A1 - Status: Published application - Kind: A1 - Application number: 17/384,940 - Filed: 2021-07-26 - Published: 2022-02-03 - Earliest claimed: 2020-07-28 - Assignees: CMC Materials, Inc. - Applicants: CMC Materials, Inc. - Inventors: Hsin-Yen WU; Jin-Hao JHANG; Cheng-Yuan KO - Web page: https://patentgrep.com/patent/US20220033682A1 ## CPC - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C09K 3/1436: {Composite particles, e.g. coated particles} - C09K 3/1409: {Abrasive particles per se (preparation of diamond C01B32/25)} - C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) - H10P 52/403: {of conductive or resistive materials} - H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation} - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate. ## Claims ### Claim 1 A chemical mechanical polishing composition comprising: a water based liquid carrier; abrasive particles dispersed in the liquid carrier; an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof; and an anionic polymer or an anionic surfactant. ### Claim 2 (depends on 1) The composition of claim 1 further comprising: an iron-containing accelerator; and a stabilizer bound to the iron-containing accelerator. ### Claim 3 (depends on 1) The composition of claim 1, further comprising a hydrogen peroxide oxidizer. ### Claim 4 (depends on 1) The composition of claim 1, wherein the anionic polymer is selected from the group consisting of polysulfonic acids, polyacrylic acids, and polyphosphoric acids. ### Claim 5 (depends on 4) The composition of claim 4, wherein the anionic polymer is a polysulfonic acid polymer comprising sulfonic acid monomer units selected from the group consisting of polyvinyl sulfonic acid, polystyrene sulfonic acid, poly(2-acrylamido-2-methylpropane sulfonic acid), poly(styrenesulfonic acid-co-maleic acid), and mixtures thereof. ### Claim 6 (depends on 5) The composition of claim 5, wherein the anionic polymer is polyvinyl sulfonic acid (PVSA) or polystyrenesulfonic acid (PSSA). ### Claim 7 (depends on 6) The composition of claim 6, wherein the amino acid is selected from the group consisting of arginine, histidine, and mixtures thereof. ### Claim 8 (depends on 1) The composition of claim 1, wherein the anionic surfactant comprises an alkyl group and a negative charged sulfate or sulfonate group. ### Claim 9 (depends on 1) The composition of claim 1, wherein the anionic surfactant is selected from the group consisting of disodium hexadecyldiphenyloxide disulfonate, ammonium lauryl polyoxyethylene ether sulfate, ammonium polyoxyethylene styrenated aryl sulfate, and combinations thereof. ### Claim 10 (depends on 1) The composition of claim 1 wherein the abrasive particles comprise anionic silica or anionic alumina. ### Claim 11 (depends on 1) The composition of claim 1, further comprising an amino acid surfactant. ### Claim 12 (depends on 11) The composition of claim 11, wherein the amino acid surfactant comprises an amino acid group selected from the group consisting of glycine, alanine, arginine, histidine, lysine, aspartic acid, and glutamic acid. ### Claim 13 (depends on 11) The composition of claim 11, wherein the amino acid surfactant comprises Triethanolamine N-Cocoyl-DL-alaninate, L-Arginine Cocoate, Glycine, N-methyl-N-(1-oxododecyl), and mixtures thereof. ### Claim 14 (depends on 11) The composition of claim 11, comprising from about 100 ppm by weight to about 1000 ppm by weight of the anionic surfactant and about 30 ppm by weight to about 300 ppm by weight of the amino acid surfactant. ### Claim 15 (depends on 1) The composition of claim 1, wherein: the abrasive particles comprise anionic silica or anionic alumina; the amino acid is selected from the group consisting of arginine, histidine, and mixtures thereof; and the anionic polymer or the anionic surfactant comprises an anionic surfactant including an alkyl group and a negative charged sulfate or sulfonate group. ### Claim 16 (depends on 15) The composition of claim 15, further comprising an amino acid surfactant including an amino acid group selected from the group consisting of glycine, alanine, arginine, histidine, lysine, aspartic acid, and glutamic acid. ### Claim 17 A method of chemical mechanical polishing a substrate having a tungsten layer or a molybdenum layer, the method comprising: (a) contacting the substrate with a polishing composition comprising: (i) a water based liquid carrier; (ii) abrasive particles dispersed in the liquid carrier; (iii) an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof; and (iv) an anionic polymer or an anionic surfactant; (b) moving the polishing composition relative to the substrate; and (c) abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate. ### Claim 18 (depends on 17) The method of claim 17, further comprising: an iron-containing accelerator. a stabilizer bound to the iron-containing accelerator. ### Claim 19 (depends on 17) The method of claim 17, wherein the anionic polymer or the anionic surfactant comprises an anionic surfactant including an alkyl group and a negative charged sulfate or sulfonate group. ### Claim 20 (depends on 17) The method of claim 17, wherein the polishing composition further comprises an amino acid surfactant. ### Claim 21 (depends on 20) The method of claim 20, wherein: the amino acid is selected from the group consisting of arginine, histidine, and mixtures thereof; the anionic polymer or the anionic surfactant comprises an anionic surfactant including an alkyl group and a negative charged sulfate or sulfonate group; and the amino acid surfactant comprises an amino acid group selected from the group consisting of glycine, alanine, arginine, histidine, lysine, aspartic acid, and glutamic acid.