# US 2022/0033265 A1 · Method for manufacturing two-dimensional material using top-down method

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- Number: US 2022/0033265 A1
- Document ID: US20220033265A1
- Status: Published application
- Kind: A1
- Application number: 17/388,600
- Filed: 2021-07-29
- Published: 2022-02-03
- Earliest claimed: 2020-07-30
- Assignees: Ajou University Industry-Academic Cooperation Foundation
- Applicants: Ajou University Industry-Academic Cooperation Foundation
- Inventors: Jaehyun LEE; Jiyun MOON
- Web page: https://patentgrep.com/patent/US20220033265A1

## CPC

- C01B 32/194: After-treatment
- C01B 19/007: {Tellurides or selenides of metals (C01B19/002 takes precedence)}
- C01B 21/0648: {After-treatment, e.g. grinding, purification (transformation of hexagonal into cubic or wurtzitic boron nitride C04B35/5831)}
- C01B 32/19: by exfoliation
- C01G 39/06: Sulfides
- C30B 29/02: Elements
- C30B 29/403: {AIII-nitrides}
- C30B 29/46: Sulfur-, selenium- or tellurium-containing compounds
- C30B 29/64: Flat crystals, e.g. plates, strips or discs
- C30B 33/00: After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)
- C30B 33/06: Joining of crystals
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- C01B 2204/02: Single layer graphene
- C01P 2004/02: obtained by optical microscopy
- C01P 2004/24: Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

The present embodiments relate to a method for manufacturing a two-dimensional material using a top-down method, the method includes the steps of preparing a bulk crystal, forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer, exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal, transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate, and removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.

## Claims

### Claim 1

A method for manufacturing a two-dimensional material using a top-down method, the method comprising the steps of:
preparing a bulk crystal;
forming a metal layer on the bulk crystal, and then attaching a thermal release tape on the metal layer;
exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached from the bulk crystal;
transferring the two-dimensional material to which the metal layer and the thermal release tape have been attached onto a substrate; and
removing the thermal release tape and the metal layer from the substrate onto which the two-dimensional material has been transferred.

### Claim 2 (depends on 1)

The method of claim 1, wherein the bulk crystal includes at least one of graphite, transition metal dichalcogenide (TMD), hexagonal boron nitride (h-BN), and black phosphorus (BP).

### Claim 3 (depends on 1)

The method of claim 1, wherein the metal layer is formed using a metal including at least one of gold, silver, copper, iron, nickel, cobalt, aluminum, and palladium.

### Claim 4 (depends on 1)

The method of claim 1, wherein the step of forming the metal layer is performed by a deposition method using at least one of thermal evaporation equipment and an E-beam evaporator.

### Claim 5 (depends on 1)

The method of claim 1, wherein, in the step of exfoliating a two-dimensional material to which the metal layer and the thermal release tape have been attached, the difference between the binding energy between the respective layers within the bulk crystal, and the binding energy between the bulk crystal and the metal layer is 30 meV/atom or less.

### Claim 6 (depends on 1)

The method of claim 1, wherein the exfoliated two-dimensional material has an average thickness range of 0.3 nm to 1 nm.

### Claim 7 (depends on 1)

The method of claim 1, wherein, in the step of removing the thermal release tape and the metal layer, the removal of the thermal release tape is performed by applying heat of 100° C. to 150° C.

### Claim 8 (depends on 1)

The method of claim 1, wherein, in the step of removing the thermal release tape and the metal layer, the removal of the metal layer is performed using at least one of a KI (potassium iodide), I2 (iodine), HCl, HNO3, and a gold etchant.