# US 2022/0033249 A1 · Mems sensor with particle filter and method for producing it > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0033249 A1 - Document ID: US20220033249A1 - Status: Published application - Kind: A1 - Application number: 17/376,539 - Filed: 2021-07-15 - Published: 2022-02-03 - Earliest claimed: 2020-08-03 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Andre BROCKMEIER; Barbara Angela GLANZER; Marten OLDSEN; Francesco SOLAZZI; Carsten VON KOBLINSKI - Web page: https://patentgrep.com/patent/US20220033249A1 ## CPC - B81B 7/0032: {Packages or encapsulation (processes for packaging MEMS B81C1/00261; packaging of smart-MEMS B81C1/0023)} - H04R 1/086: {Protective screens, e.g. all weather or wind screens} - B81B 3/0021: {Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00)} - B81B 7/0041: {maintaining a controlled atmosphere with techniques not provided for in B81B7/0038} - B81B 7/0058: {for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations} - B81B 7/0061: {suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound} - B81B 7/007: {Interconnections between the MEMS and external electrical signals} - B81B 7/0074: {3D packaging, i.e. encapsulation containing one or several MEMS devices arranged in planes non-parallel to the mounting board} - B81B 7/02: containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) - B81C 1/00293: {maintaining a controlled atmosphere with processes not provided for in B81C1/00285} - B81C 1/00309: {suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound} - B81C 1/00357: {involving bonding one or several substrates on a non-temporary support, e.g. another substrate} - G01L 9/0042: {Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively)} - G01L 19/0636: {using particle filters} - G01L 19/0654: {against moisture or humidity} - H04R 1/04: Structural association of microphone with electric circuitry therefor (in electric hearing aids H04R25/00) - B81B 2201/0257: Microphones or microspeakers - B81B 2201/0264: Pressure sensors - B81C 2201/0133: Wet etching - H04R 2201/003: Mems transducers or their use - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - H04R: LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS (producing sounds with frequency not determined by supply frequency G10K) - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G) ## Abstract The semiconductor device includes a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface, a first glass-based substrate, on which the MEMS chip is arranged by its first main surface, and a second substrate, which is arranged on the second main surface of the MEMS chip, wherein the MEMS chip has a first recess connected to the surroundings by way of a plurality of perforation holes arranged in the first substrate. ## Claims ### Claim 1 A semiconductor device, comprising: a microelectromechanical system (MEMS) chip having a first main surface and a second main surface situated opposite the first main surface; a first glass-based substrate on which the first main surface of the MEMS chip is arranged, wherein the first glass-based substrate includes a plurality of perforation holes; and a second substrate which is arranged on the second main surface of the MEMS chip, wherein the first main surface of the MEMS chip has a first recess connected to an external environment by way of the plurality of perforation holes that extend through the first glass-based substrate between the first recess and the external environment. ### Claim 2 (depends on 1) The semiconductor device as claimed in claim 1, wherein the MEMS chip has a sensor or a microphone arranged in the first recess. ### Claim 3 (depends on 2) The semiconductor device as claimed in claim 2, wherein the MEMS chip has a membrane, wherein the first recess extends to the membrane. ### Claim 4 (depends on 2) The semiconductor device as claimed in claim 2, wherein: the sensor is one or more of a pressure sensor, a sound sensor, a microphone, a gas sensor, or a combined pressure and acceleration sensor. ### Claim 5 (depends on 1) The semiconductor device as claimed in claim 1, wherein: a diameter of each of the plurality of perforation holes is in a range of 3 μm to 50 μm. ### Claim 6 (depends on 1) The semiconductor device as claimed in claim 1, wherein: the plurality of perforation holes are arranged regularly, in a matrix-shaped fashion or point-symmetrically around a center point. ### Claim 7 (depends on 1) The semiconductor device as claimed in claim 1, wherein: the glass-based first substrate has a thickness in a range of 50 μm to 550 μm. ### Claim 8 (depends on 1) The semiconductor device as claimed in claim 1, wherein: the glass-based first substrate has a smaller thickness in a region of the plurality of perforation holes than outside the plurality of perforation holes. ### Claim 9 (depends on 2) The semiconductor device as claimed in claim 2, wherein: the second substrate has a second recess that is situated opposite the first recess of the MEMS chip and forms a back volume for the sensor or the microphone. ### Claim 10 (depends on 1) The semiconductor device as claimed in claim 1, wherein: the glass-based first substrate has electrical through connections that are electrically connected to the MEMS chip and extend to a main surface of the glass-based first substrate that faces away from the MEMS chip. ### Claim 11 (depends on 1) The semiconductor device as claimed in claim 1, further comprising: a hydrophobic layer applied to sidewalls of the plurality of perforation holes and to adjacent areas of the glass-based first substrate, or wherein surfaces of the glass-based first substrate around the plurality of perforation holes are micro-structured. ### Claim 12 A method for producing a semiconductor device, wherein the method comprises: providing a microelectromechanical system chip having a first main surface and a second main surface situated opposite the first main surface, wherein the first main surface of the MEMS chip has a recess; providing a first glass-based substrate, wherein the first glass-based substrate has a plurality of perforation holes; applying the first main surface of the MEMS chip onto the first glass-based substrate in such a way that the recess becomes located over the plurality of perforation holes; providing a second substrate, which is arranged on the second main surface of the MEMS chip; and applying the second substrate to the second main surface of the MEMS chip. ### Claim 13 (depends on 12) The method as claimed in claim 12, wherein the plurality of perforation holes are produced by exposing the first glass-based substrate to a laser beam. ### Claim 14 (depends on 13) The method as claimed in claim 13, wherein producing the plurality of perforation holes comprises: damaging an area of the first glass-based substrate at which the plurality of perforation holes are to be formed by a laser beam and subsequently removing regions of the first glass-based substrate by wet-chemical etching to form the plurality of perforation holes. ### Claim 15 (depends on 14) The method as claimed in claim 14, wherein: the regions to be removed are ablated by the laser beam. ### Claim 16 (depends on 13) The method as claimed in claim 13, wherein: before or after producing the plurality of perforation holes, a region of the first glass-based substrate around the plurality of perforation holes is thinned. ### Claim 17 (depends on 12) The method as claimed in claim 12, wherein: the MEMS chip together with at least one of the first glass-based substrate and/or the second substrate are connected to one another by anodic or plasma-activated bonding, eutectic bonding, bonding using glass frit or glass pastes, thermocompression bonding, or adhesive bonding. ### Claim 18 (depends on 12) The method as claimed in claim 12, further comprising: producing electrical through connections in the first glass-based substrate in such a way that they are electrically connected to the MEMS chip and extend to a main surface of the first glass-based substrate that faces away from the MEMS chip. ### Claim 19 (depends on 12) The method as claimed in claim 12, further comprising: applying a hydrophobic layer is applied to sidewalls of the plurality of perforation holes and to adjacent areas of the glass-based first substrate, or micro-structuring surfaces of the glass-based first substrate around the plurality of perforation holes. ### Claim 20 (depends on 12) The method as claimed in claim 12, wherein: the semiconductor device is one of a plurality of semiconductor devices that are produced at the wafer level.