Electrode defined resonator
AssigneeII-Vi Delaware, Inc.
InventorsDi Lan, Wen-Qing Xu, Giovanni Barbarossa
Life of this patent
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Abstract
A bulk acoustic resonator operable in a bulk acoustic mode includes a resonator body mounted to a separate carrier that is not part of the resonator body. The resonator body includes a piezoelectric layer, a device layer, and a top conductive layer on the piezoelectric layer opposite the device layer. A surface of the device layer opposite the piezoelectric layer is for mounting the resonator body to the carrier.
Claims21
1-15. (canceled)
A bulk acoustic resonator for use on a carrier, the bulk acoustic resonator comprising:
- a resonator body including:
- a piezoelectric layer having a thickness;
- a first conductive layer positioned adjacent the piezoelectric layer, the first conducing layer having a plurality of first conductive elements spaced from each other by a first pitch;
- and
- a device layer positioned adjacent the piezoelectric layer opposite the first conductive layer, a first surface of the device layer opposite the piezoelectric layer being configured to support the resonator body adjacent the carrier,
- wherein the resonator body is configured to resonate in a composite mode of acoustic resonance, the composite mode of the acoustic resonance being a combination of (i) a thickness mode of the acoustic resonance defined by the thickness and (ii) a lateral mode of the acoustic resonance defined by the first pitch.
A bulk acoustic resonator device, the bulk acoustic resonator device comprising:
- a carrier having a carrier surface;
- a resonator body having a body surface mounted directly to the carrier surface and including:
- a piezoelectric layer having a thickness and having a first acoustic impedance;
- a first conductive layer positioned adjacent the piezoelectric layer, the first conducing layer having a plurality of first conductive elements spaced from each other by a first pitch;
- and
- a device layer positioned adjacent the piezoelectric layer opposite the first conductive layer and having a second acoustic impedance, the second acoustic impedance being greater than the first acoustic impedance, the device layer being configured to support the resonator body mounted directly to the carrier surface,
- wherein the resonator body is configured to resonate in a composite mode of acoustic resonance, the composite mode of the acoustic resonance being a combination of (i) a thickness mode of the acoustic resonance defined by the thickness and (ii) a lateral mode of the acoustic resonance defined by the first pitch.
Dependencies are inferred from the claim text.