Semiconductor Laser

A semiconductor laser comprising:

• an active region including an active layer on a substrate, the active layer comprising a compound semiconductor material;
• a first distributed-Bragg-reflector region contiguous with a first side of the active region in a waveguide direction, the first distributed-Bragg-reflector region having a first diffraction grating;
• and
• a second distributed-Bragg-reflector region contiguous with a second side of the active region in the waveguide direction, the second distributed-Bragg-reflector region having a second diffraction grating, wherein the first diffraction grating comprises a diffraction grating layer that is made of a dielectric material and formed in the first distributed-Bragg-reflector region, and the first diffraction grating includes first recessed portions extending through the diffraction grating layer.

A method of forming a semiconductor laser, the method comprising:

• providing an active region including an active layer on a substrate, the active layer comprising a compound semiconductor material;
• forming a first distributed-Bragg-reflector region contiguous with a first side of the active region in a waveguide direction, the first distributed-Bragg-reflector region having a first diffraction grating;
• and
• forming a second distributed-Bragg-reflector region contiguous with a second side of the active region in the waveguide direction, the second distributed-Bragg-reflector region having a second diffraction grating, wherein the first diffraction grating comprises a diffraction grating layer that is made of a dielectric material and formed in the first distributed-Bragg-reflector region;
• and
• patterning first recesses extending through the diffraction grating layer.