Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same

A phase-change memory having a highly integrated three-dimensional architecture, the phase-change memory comprising:

• at least one horizontal electrode extending in a first direction and a vertical electrode extending in a second direction perpendicular to the first direction;
• at least one phase-change layer extending in the first direction to be in contact with the at least one horizontal electrode, respectively, to change a crystal state of the at least one phase-change layer by heat supplied by the at least one horizontal electrode and the vertical electrode;
• and
• a selector extending in the second direction to be in contact with the at least one phase-change layer and the vertical electrode, respectively, and selectively switching the heat supplied by the at least one horizontal electrode and the vertical electrode to the at least one phase-change layer to change a crystal state of a target phase-change layer of the at least one phase-change layer,
• wherein the selector is formed of a compound containing a transition metal in a phase-change material to have a high resistance when a crystal state of the selector is crystalline and to have a low resistance when the crystal state of the selector is non-crystalline.

A method of a phase-change memory having a highly integrated three-dimensional architecture, the method comprising:

• alternately stacking at least one insulating layer and at least one horizontal electrode extending in a first direction;
• forming a vertical hole through the stacked at least one insulating layer and at least one horizontal electrode in a second direction perpendicular to the first direction;
• etching a portion of the at least one horizontal electrode exposed on an inner surface of the vertical hole;
• filling at least one phase-change layer in a space where the portion of the at least one horizontal electrode is etched;
• forming a selector on the inner surface of the vertical hole to be in contact with the at least one phase-change layer;
• and
• filling a vertical electrode in the vertical hole in which the selector is formed,
• wherein the selector is formed of a compound containing a transition metal in a phase-change material to have a high resistance when a crystal state of the selector is crystalline and to have a low resistance when the crystal state of the selector is non-crystalline.

A method of a phase-change memory having a highly integrated three-dimensional architecture, the method comprising:

• alternately stacking at least one insulating layer and at least one sacrificial layer extending in a first direction;
• forming a vertical hole through the stacked at least one insulating layer and at least one sacrificial layer in a second direction perpendicular to the first direction;
• etching a portion of the at least one sacrificial layer exposed on an inner surface of the vertical hole;
• filling at least one phase-change layer in a space where the portion of the at least one sacrificial layer is etched;
• forming a selector on the inner surface of the vertical hole to be in contact with the at least one phase-change layer;
• filling a vertical electrode in the vertical hole in which the selector is formed;
• removing the at least one sacrificial layer;
• and
• filling at least one horizontal electrode in a space from which the at least one sacrificial layer is removed,
• wherein the selector is formed of a compound containing a transition metal in a phase-change material to have a high resistance when a crystal state of the selector is crystalline and to have a low resistance when the crystal state of the selector is non-crystalline.