Back to results
US 2022/0029090 A1Published application
Spin-orbit torque structure including topological materials and magnetic memory device including the spin-orbit torque structure
AssigneesSamsung Electronics Co., Ltd., Postech Research and Business Development Foundation
InventorsWon Joon CHO, Sungdug KIM, Inseob SHIN, Gilho LEE, Seong JANG
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a spin-orbit torque structure having a high spin Hall angle and low resistance by including a topological material. In addition, the present disclosure provides a spin-orbit torque structure having a low power consumption density by including a topological material. Also, a magnetic memory device including the spin-orbit torque structure is provided.
Claims25
A spin-orbit torque structure comprising:
- an electrode layer including a two-dimensional topological material and configured to generate spin current;
- and
- a free magnetic layer in contact with the electrode layer, the free magnetic layer including a ferromagnetic material, and configured to be magnetically switched by receiving a spin-orbit torque by the spin current.
Dependencies are inferred from the claim text.