Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistance effect element, magnetic memory, and reservoir element

A spin-orbit torque magnetization rotational element comprising:

• a first insulating layer with a first opening and a second opening;
• a first conductive portion formed inside the first opening;
• a second conductive portion formed inside the second opening;
• a spin-orbit torque wiring located in a first direction of the first insulating layer and extends in a second direction over the first conductive portion and the second conductive portion when viewed from the first direction;
• and
• a first ferromagnetic layer located on the side opposite to the first insulating layer in the spin-orbit torque wiring,
• wherein the first conductive portion includes a first surface facing the spin-orbit torque wiring, a second surface facing the first surface and is located at a position farther from the spin-orbit torque wiring than the first surface, and a side surface connecting the first surface and the second surface, and
• wherein the side surface includes a continuous major surface and a third surface inclined or curved with respect to the major surface and is discontinuous with respect to the major surface.