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US 2022/0029018 A1Published application
Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion
AssigneeSony Corporation
InventorTakuji Matsumoto
Life of this patent
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Abstract
A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in a recessed position at a side of the gate electrode, and a diffusion layer disposed in a surface layer of the semiconductor substrate.
Claims18
A semiconductor device comprising:
- a substrate having a semiconductor layer with a distinct well diffusion region in the semiconductor layer, the well diffusion region being of a first conductivity type;
- a gate electrode on the semiconductor layer;
- a first source/drain at a first side of the gate electrode consisting of a first diffusion region in the well diffusion region, the first diffusion region being of a second conductivity type opposite the first conductivity type and having impurities in and at a first surface portion of the semiconductor layer;
- an opposite-conductivity type diffusion region adjacent the first diffusion region and in a second surface portion of the semiconductor layer at the first side of the gate electrode, the first diffusion region being between the opposite-conductivity type diffusion region and the gate electrode, the opposite-conductivity type diffusion region being of the first conductivity type;
- and
- a second source/drain at a second side of the gate electrode opposite the first side and either (a) consisting of an epitaxial region in a recess in a third surface portion of the semiconductor layer and having a lattice constant different from a lattice constant of the semiconductor layer, the epitaxial region being in the well diffusion region and being of the second conductivity type, or (b) consisting of the epitaxial region in the recess in the third surface portion of the semiconductor layer and a second diffusion region in the well diffusion region, the epitaxial region being laterally between the second diffusion region and the gate electrode in a channel length direction, the second diffusion region being, in the channel length direction, laterally adjacent to the epitaxial region and being of the second conductivity type.
3 more elements
A transistor comprising:
- a substrate having a semiconductor layer with a well diffusion region in the semiconductor layer, the well diffusion region being of a first conductivity type;
- a gate electrode on the substrate;
- a first source/drain at a first side of the gate electrode and (a) consisting of a first diffusion region having impurities in and at a first surface portion of the semiconductor layer in the well diffusion region, (b) being of a second conductivity type opposite the first conductivity type, and (c) being in the well diffusion region;
- a second source/drain at a second side of the gate electrode opposite the first side and either (a) consisting of an epitaxial region in a recess in a second surface portion of the semiconductor layer and having a lattice constant different from a lattice constant of the semiconductor layer, the epitaxial region being in the well diffusion region or (b) consisting of the epitaxial region and a second diffusion region in the well diffusion region, the epitaxial region being laterally between the second diffusion region and the gate electrode in a channel length direction, the second diffusion region being, in the channel length direction, laterally adjacent to the epitaxial region and being of the second conductivity type;
- an opposite-conductivity type diffusion region in the well region at a third surface portion of the semiconductor layer at the first side of the gate electrode, the first diffusion region being between the opposite-conductivity type diffusion region and the gate electrode, the opposite-conductivity type diffusion region and the well diffusion region being of a same conductivity type;
- and
- a conductive layer connecting the first diffusion region and the opposite-conductivity type diffusion region,
- wherein, the first source/drain and second source/drain are asymmetrical in structure with respect to each other in that the first source/drain excludes any epitaxial material and the second source/drain region includes an epitaxial region.
5 more elements
Dependencies are inferred from the claim text.