Semiconductor device

A semiconductor device which is a chip-size-package-type semiconductor device that is facedown mountable, the semiconductor device comprising:

• a semiconductor layer;
• a metal layer that is disposed in contact with a bottom surface of the semiconductor layer;
• a first vertical metal oxide semiconductor (MOS) transistor disposed in a first region of the semiconductor layer;
• and
• a second vertical MOS transistor disposed in a second region of the semiconductor layer, the second region being adjacent to the first region in a plan view of the semiconductor layer, wherein:
• the first region and the second region are one and the other of two regions obtained by bisecting an area of the semiconductor layer,
• components constituting the first vertical MOS transistor are included in the first region, and components constituting the second vertical MOS transistor are included in the second region,
• in the plan view:
• the semiconductor layer includes the first vertical MOS transistor and the second vertical MOS transistor that are aligned in a first direction, and is a rectangle having longer sides extending in the first direction, and
• a boundary between the first region and the second region extends in a crank shape,
• the semiconductor layer includes a semiconductor substrate,
• the first vertical MOS transistor includes, on a surface of the semiconductor layer, first source pads and a first gate pad that are joined to a mounting substrate during facedown mounting, and the second vertical MOS transistor includes, on the surface of the semiconductor layer, second source pads and a second gate pad that are joined to the mounting substrate during facedown mounting,
• the semiconductor substrate functions as a common drain region shared between the first vertical MOS transistor and the second vertical MOS transistor, and
• in the plan view:
• a principal current flows in the first direction,
• the first gate pad is disposed such that none of the first source pads is disposed between the first gate pad and a first side that is parallel to the first direction and located closest to the first gate pad among four sides of the semiconductor layer, and none of the first source pads is disposed between the first gate pad and the boundary in the first direction,
• the second gate pad is disposed such that none of the second source pads is disposed between the second gate pad and a second side that is parallel to the first direction and located closest to the second gate pad among the four sides of the semiconductor layer, and none of the second source pads is disposed between the second gate pad and the boundary in the first direction,
• the second side is a side opposite the first side,
• the first gate pad and the second gate pad are each disposed on a central line that bisects the semiconductor layer and is orthogonal to the first direction,
• each of the first source pads and the second source pads is approximately rectangular or oblong in shape, with a lengthwise direction of the source pad parallel to the first direction,
• the first source pads are disposed in a stripe pattern, and the second source pads are disposed in a stripe pattern,
• at least any one of the first source pads and at least any one of the second source pads are disposed in a stripe-shaped region extending in the first direction and being sandwiched between the first gate pad and the second gate pad in a direction orthogonal to the first direction, and
• the first gate pad and the second gate pad are not disposed in the stripe-shaped region.

A semiconductor device which is a chip-size-package-type semiconductor device that is facedown mountable, the semiconductor device comprising:

• a semiconductor layer;
• a metal layer that is disposed in contact with a bottom surface of the semiconductor layer and has a thickness of at least 10 μm and at most 90 μm;
• a first vertical metal oxide semiconductor (MOS) transistor disposed in a first region of the semiconductor layer;
• and
• a second vertical MOS transistor disposed in a second region of the semiconductor layer, the second region being adjacent to the first region in a plan view of the semiconductor layer, wherein:
• the first region and the second region are one and the other of two regions obtained by bisecting an area of the semiconductor layer,
• components constituting the first vertical MOS transistor are included in the first region, and components constituting the second vertical MOS transistor are included in the second region,
• in the plan view:
• the semiconductor layer includes the first vertical MOS transistor and the second vertical MOS transistor that are aligned in a first direction, and a length of a side of the semiconductor layer in the first direction is less than a length of a side of the semiconductor layer in a direction orthogonal to the first direction, and
• a boundary between the first region and the second region extends in a crank shape,
• the semiconductor layer includes a semiconductor substrate,
• the first vertical MOS transistor includes, on a surface of the semiconductor layer, first source pads and a first gate pad that are joined to a mounting substrate during facedown mounting, and the second vertical MOS transistor includes, on the surface of the semiconductor layer, second source pads and a second gate pad that are joined to the mounting substrate during facedown mounting,
• the semiconductor substrate functions as a common drain region shared between the first vertical MOS transistor and the second vertical MOS transistor, and
• in the plan view:
• a principal current flows in the first direction,
• the first gate pad is disposed such that none of the first source pads is disposed between the first gate pad and a first side that is parallel to the first direction and located closest to the first gate pad among four sides of the semiconductor layer, and none of the first source pads is disposed between the first gate pad and the boundary in the first direction,
• the second gate pad is disposed such that none of the second source pads is disposed between the second gate pad and a second side that is parallel to the first direction and located closest to the second gate pad among the four sides of the semiconductor layer, and none of the second source pads is disposed between the second gate pad and the boundary in the first direction,
• the second side is a side opposite the first side,
• the first gate pad and the second gate pad are each disposed on a central line that bisects the semiconductor layer and is orthogonal to the first direction,
• the first vertical MOS transistor includes a first source electrode disposed below the first source pads and connected to the first source pads,
• the second vertical MOS transistor includes a second source electrode disposed below the second source pads and connected to the second source pads,
• each of the first source pads and the second source pads is approximately rectangular or oblong in shape, with a lengthwise direction of the source pad parallel to the direction orthogonal to the first direction, and
• the first source pads are disposed in a stripe pattern, and the second source pads are disposed in a stripe pattern.

A semiconductor device which is a chip-size-package-type semiconductor device that is facedown mountable, the semiconductor device comprising:

• a semiconductor layer;
• a metal layer that is disposed in contact with a bottom surface of the semiconductor layer;
• a first vertical metal oxide semiconductor (MOS) transistor disposed in a first region of the semiconductor layer;
• and
• a second vertical MOS transistor disposed in a second region of the semiconductor layer, the second region being adjacent to the first region in a plan view of the semiconductor layer, wherein:
• the first region and the second region are one and the other of two regions obtained by bisecting an area of the semiconductor layer,
• components constituting the first vertical MOS transistor are included in the first region, and components constituting the second vertical MOS transistor are included in the second region,
• in the plan view:
• the semiconductor layer includes the first vertical MOS transistor and the second vertical MOS transistor that are aligned in a first direction, and a length of a side of the semiconductor layer in the first direction is less than a length of a side of the semiconductor layer in a direction orthogonal to the first direction, and
• a boundary between the first region and the second region extends in a crank shape,
• the semiconductor layer includes a semiconductor substrate,
• the first vertical MOS transistor includes, on a surface of the semiconductor layer, first source pads and a first gate pad that are joined to a mounting substrate during facedown mounting, and the second vertical MOS transistor includes, on the surface of the semiconductor layer, second source pads and a second gate pad that are joined to the mounting substrate during facedown mounting,
• the semiconductor substrate functions as a common drain region shared between the first vertical MOS transistor and the second vertical MOS transistor, and
• in the plan view:
• a principal current flows in the first direction,
• the first gate pad is disposed such that none of the first source pads is disposed between the first gate pad and a first side that is parallel to the first direction and located closest to the first gate pad among four sides of the semiconductor layer, and none of the first source pads is disposed between the first gate pad and the boundary in the first direction,
• the second gate pad is disposed such that none of the second source pads is disposed between the second gate pad and a second side that is parallel to the first direction and located closest to the second gate pad among the four sides of the semiconductor layer, and none of the second source pads is disposed between the second gate pad and the boundary in the first direction,
• the second side is a side opposite the first side,
• the first gate pad and the second gate pad are each disposed on a central line that bisects the semiconductor layer and is orthogonal to the first direction,
• the first vertical MOS transistor includes a first source electrode disposed below the first source pads and connected to the first source pads,
• the second vertical MOS transistor includes a second source electrode disposed below the second source pads and connected to the second source pads,
• each of the first source pads and the second source pads is approximately rectangular or oblong in shape, with a lengthwise direction of the source pad parallel to the direction orthogonal to the first direction, and
• the first source pads are disposed in a stripe pattern, and the second source pads are disposed in a stripe pattern,
• at least any one of the first source pads and at least any one of the second source pads are disposed in a stripe-shaped region extending in the first direction and being sandwiched between the first gate pad and the second gate pad in the direction orthogonal to the first direction, and
• the first gate pad and the second gate pad are not disposed in the stripe-shaped region.