Method for manufacturing a semiconductor device

A method for fabricating a semiconductor device, the method comprising:

• forming a trench in a first major surface of a semiconductor body comprising a first conductivity type;
• forming a gate in the trench;
• forming a body region of a second conductivity type in the semiconductor body;
• implanting a second dopant species into a first region of the body region;
• implanting a first dopant species into a second region of the body region, wherein the first dopant species provides the first conductivity type and wherein the second dopant species is different from the first dopant species and reduces the diffusion of the first dopant species in the semiconductor body;
• and
• thermally annealing the semiconductor body to form a source region, the source region comprising the first dopant species and the second dopant species, and to produce a pn-junction between the source region and the body region at a depth dpn from the first major surface, wherein 50 nm<dpn<300 nm.