Integration of a schottky diode with a mosfet

A semiconductor device for electrical communication with a source, a gate, and a drain, the semiconductor device comprising:

• a buried grid structure having a substrate and a drift layer, the drift layer disposed on the substrate;
• a MOSFET structure integrated on the drift layer of the buried grid structure, the MOSFET structure having:
• a first source node for electrical communication with the source, a first drain node for electrical communication with the drain, and a first gate node for electrical communication with the gate;
• a Schottky diode structure integrated on the same drift layer of the buried grid structure adjacent the MOSFET structure, the Schottky diode structure connected in parallel to the MOSFET structure, the Schottky diode structure having a first anode for electrical communication with the source and having a first cathode for electrical communication with the drain;
• and
• a diode structure integrated on the semiconductor device and connected in parallel to the MOSFET structure and the Schottky diode structure, the diode structure having a second anode for electrical communication with the source and having a second cathode for electrical communication with the drain.