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US 2022/0029008 A1Published application
Device and semiconductor structure for improving the disadvantages of p-gan gate high electron mobility transistor
AssigneesDelta Electronics, Inc., National Central University
InventorsChun-Chieh YANG, Yue-Ming HSIN, Yi-Nan ZHONG, Yu-Chen LAI
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Abstract
A device includes a first transistor and a second transistor. The first transistor includes a first gate terminal coupled to the first source terminal, a first source terminal, and a first drain terminal. The second transistor includes a second gate terminal coupled to the first drain terminal, a second source terminal, and a second drain terminal.
Claims20
A device, comprising:
- a first transistor, comprising a first gate terminal, a first source terminal, and a first drain terminal, wherein the first gate terminal is coupled to the first source terminal;
- and
- a second transistor, comprising a second gate terminal, a second source terminal, and a second drain terminal, wherein the second gate terminal is coupled to the first drain terminal.
A semiconductor structure, comprising:
- a substrate;
- a III-V compound buffer layer, disposed over the substrate, wherein a top of the III-V compound buffer layer comprises a first region and a second region;
- a first III-V compound layer, disposed in the first region and over the III-V compound buffer layer;
- a second III-V compound layer, disposed in the second region and over the III-V compound buffer layer;
- a first gate structure, disposed over the first III-V compound layer;
- a second gate structure, disposed over the second III-V compound layer;
- a first source region, coupled to the first gate structure;
- a first drain region, coupled to the second gate structure, wherein the first source region and the first drain region are respectively disposed on two opposite sides of the first gate structure and over the first III-V compound layer;
- a second source region;
- and
- a second drain region, wherein the second source region and the second drain region are respectively disposed on two opposite sides of the second gate structure and over the second III-V compound layer.
8 more elements
Dependencies are inferred from the claim text.