High electron mobility transistor and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsKuo-Hsing Lee, Sheng-Yuan Hsueh, Chien-Liang Wu, Kuo-Yu Liao
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, a first mesa isolation on the HEMT region, a HEMT on the first mesa isolation, a second mesa isolation on the capacitor region, and a capacitor on the second mesa isolation. The semiconductor device further includes buffer layer between the substrate, the first mesa isolation, and the second mesa isolation, in which bottom surfaces of the first mesa isolation and the second mesa isolation are coplanar.
Claims20
A semiconductor device, comprising:
- a substrate having a high electron mobility transistor (HEMT) region and a capacitor region;
- a first mesa isolation on the HEMT region;
- a HEMT on the first mesa isolation;
- a second mesa isolation on the capacitor region;
- and
- a capacitor on the second mesa isolation.
A semiconductor device, comprising:
- a substrate having a high electron mobility transistor (HEMT) region and a capacitor region;
- a mesa isolation on the HEMT region;
- a HEMT on the mesa isolation;
- a capacitor on the capacitor region;
- and
- a buffer layer between the mesa isolation, the capacitor, and substrate.
A semiconductor device, comprising:
- a substrate having a high electron mobility transistor (HEMT) region and a capacitor region;
- a mesa isolation on the HEMT region;
- a HEMT on the mesa isolation;
- a hard mask around the HEMT and extending to the capacitor region;
- and
- a capacitor on the hard mask.
Dependencies are inferred from the claim text.