Method of fabricating a semiconductor device

A method for fabricating a semiconductor device, comprising:

• forming a fin structure over a semiconductor substrate, wherein the fin structure extends in a first direction;
• forming a recessed gate electrode structure over the fin structure, wherein the recessed gate electrode structure extends in a second direction substantially perpendicular to the first direction;
• forming a recessed insulating layer over the gate electrode structure;
• forming an interlayer dielectric layer over the recessed insulating layer;
• forming a via in the interlayer dielectric layer and the recessed insulating layer exposing the gate electrode structure;
• and
• depositing a conductive material in the first via to form a gate electrode contact.

A method for fabricating a semiconductor device, comprising:

• forming a fin structure over a semiconductor substrate, wherein the fin structure extends in a first direction;
• forming a gate electrode structure over a first region of the fin structure, wherein the gate electrode structure includes a metal gate electrode layer, the gate electrode structure extends in a second direction substantially perpendicular to the first direction, and sidewalls of the gate electrode structure are surrounded by a first interlayer dielectric layer;
• recessing the metal gate electrode layer to form a recessed metal gate electrode layer;
• forming an oxide layer overlying the first interlayer dielectric layer and the sidewalls of the gate electrode structure by reacting a halide compound with oxygen;
• and
• forming a second interlayer dielectric layer over the oxide layer and the recessed insulating layer.