Field effect transistors with a gated oxide semiconductor source/drain spacer
AssigneeIntel Corporation
InventorsGilbert W. Dewey, Rafael Rios, Van H. Le, Jack T. Kavalieros
Life of this patent
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Abstract
FETs including a gated oxide semiconductor spacer interfacing with a channel semiconductor. Transistors may incorporate a non-oxide channel semiconductor, and one or more oxide semiconductors disposed proximal to the transistor gate electrode and the source/drain semiconductor, or source/drain contact metal. In advantageous embodiments, the oxide semiconductor is to be gated by a voltage applied to the gate electrode (i.e., gate voltage) so as to switch the oxide semiconductor between insulating and semiconducting states in conjunction with gating the transistor's non-oxide channel semiconductor between on and off states.
Claims20
A transistor comprising:
- a source material and a drain material coupled to a channel material;
- a gate electrode coupled to the channel material;
- and
- a spacer between the gate electrode and at least one of the source material or the drain material, wherein the spacer comprises a metal and oxygen.
A CMOS integrated circuit (IC), comprising:
- an n-type field effect transistor (FET) over a first region of a substrate, the FET further including:
- an n-type source material and an n-type drain material coupled to a channel material therebetween;
- a gate electrode coupled to the channel material;
- and
- a spacer adjacent between the gate electrode and at least one of the source material or drain material, wherein the spacer comprises a metal and oxygen;
- and
- a p-type FET over a second region of the substrate.
A method of fabricating a field effect transistor (FET), the method comprising:
- forming a channel material;
- forming a gate electrode over the channel material;
- depositing thin film over the gate electrode, the thin film comprising a metal and oxygen;
- etching the thin film to retain a spacer adjacent to a sidewall of the gate electrode;
- and
- forming a source material and a drain material adjacent to the spacer.
Dependencies are inferred from the claim text.