Gate spacers in semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Liang Lu, Chang-Yin Chen, Chih-Han Lin, Chia-Yang Liao
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Abstract
A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.
Claims20
A semiconductor device, comprising:
- a substrate;
- a fin structure with a fin top surface disposed on the substrate;
- a source/drain (S/D) region disposed on the fin structure;
- a gate structure disposed on the fin top surface;
- and
- a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region,
- wherein the first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure, and
- wherein the second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.
A semiconductor device, comprising:
- a substrate;
- a fin structure with a fin top surface disposed on the substrate;
- a source/drain (S/D) region disposed within the fin structure;
- a gate structure disposed on the fin top surface;
- and
- a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region,
- wherein the first spacer portion is a non-tapered structure and extends above the fin top surface, and
- wherein the second spacer portion is a tapered structure and is disposed within the fin structure.
A method, comprising:
- forming a fin structure with a fin top surface on a substrate;
- forming first and second polysilicon structures on the fin top surface;
- forming a spacer opening within the fin structure and between the first and second polysilicon structures;
- forming a gate spacer, wherein the forming the gate spacer comprises:
- forming a first spacer portion of the gate spacer along a sidewall of the first polysilicon structure, and
- forming a second spacer portion of the gate spacer within the spacer opening;
- forming a S/D region between the first and second polysilicon structures;
- and
- replacing the first and second polysilicon structure with first and second gate structures.
Dependencies are inferred from the claim text.