Assemblies Which Include Wordlines Having a First Metal-Containing Material at Least Partially Surrounding a Second Metal-Containing Material and Having Different Crystallinity than the Second Metal-Containing Material

A memory cell, comprising:

• a conductive gate;
• the conductive gate including a first metal-containing material substantially enveloping a second metal-containing material;
• the first and second metal-containing materials differing from one another in crystallinity, with the second metal-containing material having a larger mean grain size than the first metal-containing material;
• the first metal-containing material comprising one or more of the following compositions:
• metal carbides, metal oxides and metal germides;
• and
• a charge-blocking region adjacent the conductive gate;
• and
• a charge-storage region adjacent the charge-blocking region.

A memory cell, comprising:

• a conductive gate;
• the conductive gate including a first metal-containing material substantially enveloping a second metal-containing material;
• the first and second metal-containing materials differing from one another in crystallinity, with the second metal-containing material having a larger mean grain size than the first metal-containing material;
• the second metal-containing material comprising one or more of the following compositions:
• metal silicides, metal nitrides, metal carbides, metal oxides and metal germides;
• and
• a charge-blocking region adjacent the conductive gate;
• and
• a charge-storage region adjacent the charge-blocking region.

A memory cell, comprising:

• a conductive gate;
• the conductive gate including a first metal-containing material substantially enveloping a second metal-containing material;
• the first and second metal-containing materials differing from one another in crystallinity, with the second metal-containing material having a larger mean grain size than the first metal-containing material;
• the second metal-containing material comprising two or more of the following metals:
• tungsten, tantalum, titanium, ruthenium, molybdenum, cobalt, nickel, aluminum, copper, platinum and palladium;
• and
• a charge-blocking region adjacent the conductive gate;
• and
• a charge-storage region adjacent the charge-blocking region.