Back to results
US 2022/0028995 A1Published application
Semiconductor device and preparation method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorChihCheng LIU
Life of this patent
Estimating the term…
Abstract
A semiconductor device, including: a substrate; a gate oxide layer located in or on the substrate; and a gate located on a surface of the gate oxide layer, the gate including a monocrystalline silicon layer.
Claims19
A semiconductor device, comprising:
- a substrate;
- a gate oxide layer located in or on the substrate;
- and
- a gate located on a surface of the gate oxide layer, the gate comprising a monocrystalline silicon layer.
1 more element
A preparation method of a semiconductor device, comprising:
- providing a substrate;
- forming a gate oxide layer in or on the substrate;
- and
- forming a gate on a surface of the gate oxide layer, the gate comprising a monocrystalline silicon layer.
1 more element
Dependencies are inferred from the claim text.