Thin Film Transfer Using Substrate with Etch Stop Layer and Diffusion Barrier Layer

A method of forming a semiconductor device, the method comprising:

• forming an etch stop layer over a substrate, the etch stop layer comprising a first semiconductor material doped by a first dopant;
• forming a first diffusion barrier layer over the etch stop layer, the first diffusion barrier layer comprising silicon layers interleaved with discontinuous oxygen layers;
• epitaxially forming a second semiconductor material over the first diffusion barrier layer;
• forming a transistor in the second semiconductor material;
• forming a first interconnect structure over the second semiconductor material;
• attaching the first interconnect structure to a carrier;
• and
• after the attaching, removing the substrate, the etch stop layer, and the first diffusion barrier layer.

A method of forming a semiconductor device, the method comprising:

• forming a doped semiconductor layer over a substrate;
• forming a diffusion barrier layer over the doped semiconductor layer, the diffusion barrier layer comprising alternating epitaxial silicon layers and partial monolayers of oxygen;
• forming a device layer comprising a transistor over the diffusion barrier layer;
• and
• transferring the device layer to a workpiece, wherein the transferring comprises:
• bonding the device layer to the workpiece;
• and
• after the bonding, removing the substrate, the doped semiconductor layer, and the diffusion barrier layer.