Fabricating sub-micron contacts to buried well devices
AssigneeThe Boeing Company
InventorsKangmu Min Lee, Maxwell Daehan Choi, Jeffrey Alden Wright, Wonill Ha, Clayton Jackson, Michael Pemberton Jura, Adele Schmitz, James Chappell
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor structure. Two isolation structures are formed in a semiconductor. A cavity is etched in the semiconductor between the two isolation structures in the semiconductor. Dopants are implanted into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures. A contact is formed in the cavity. The contact is on the doped region and in direct contact with the doped region.
Claims35
A method for fabricating a semiconductor structure, the method comprising:
- etching a first silicon germanium layer onto a silicon layer located on a second silicon germanium layer on a substrate to form shallow trench isolation cavities extending through the first silicon germanium layer and the silicon layer into the second silicon germanium layer;
- depositing a dielectric in the shallow trench isolation cavities to form isolation structures;
- etching the first silicon germanium layer on the silicon layer located on the second silicon germanium layer in an area located between two of the isolation structures to form a cavity;
- implanting dopants into the cavity to form an n-well, wherein the dopants are implanted at an energy level that reduces lateral straggle of the dopants to a desired level;
- and
- depositing a metal such that the metal in the cavity contacts the n-well.
A method for fabricating a semiconductor structure, the method comprising:
- forming two isolation structures in a semiconductor;
- etching a cavity into the semiconductor between the two isolation structures in the semiconductor;
- implanting dopants into a bottom side of the cavity to form a doped region in the semiconductor below the cavity between the two isolation structures;
- and
- forming a contact in the cavity, wherein the contact is on the doped region and in direct contact with the doped region.
A semiconductor structure comprising:
- a semiconductor;
- two shallow trench isolation structures in the semiconductor;
- a cavity between the two shallow trench isolation structures;
- an active area in the semiconductor below the cavity;
- and
- a metal contact in the cavity, wherein the metal contact is in direct contact with the active area.
Dependencies are inferred from the claim text.