Flash memory with improved gate structure and a method of creating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSHENG-CHIEH CHEN, MING CHYI LIU, SHIH-CHANG LIU
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Abstract
Various embodiments provide a flash memory with an improved gate structure and a method of creating the same. The flash memory includes a plurality of memory cells that include a memory gate, a selection gate, a gate dielectric layer, and a protective cap formed on an upper surface of the gate dielectric layer. The protective cap protects the gate dielectric layer, and prevents the memory and selection gates from being unintentionally electrically connected to each other by conductive material.
Claims20
A method, comprising:
- forming a first conductive layer on a substrate;
- forming a dielectric layer on the substrate;
- forming a second conductive layer on the dielectric layer;
- forming a cavity between the first conductive layer and the second conductive layer by removing a portion of the dielectric layer;
- and
- forming a protective layer on the dielectric layer and in the cavity.
A method of forming a memory, the method comprising:
- forming a memory gate on a substrate;
- forming a selection gate on the substrate;
- forming a gate dielectric layer between the memory gate and the selection gate;
- and
- forming a protective cap on the gate dielectric layer and between the memory gate and the selection gate, wherein a surface of the memory gate, a surface of the selection gate, and a surface of the protective cap are at a same level with each other.
A method, comprising:
- forming a first conductive layer on a substrate;
- forming a second conductive layer on the substrate;
- forming a dielectric layer on the substrate and between the first and second conductive layers;
- removing a portion of the dielectric layer that separates the first and second conductive layers from each other;
- and
- forming a protective layer on the dielectric layer at a position where the portion of the dielectric layer was removed.
Dependencies are inferred from the claim text.