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US 2022/0028982 A1Published application
Semiconductor film
AssigneeNGK Insulators, Ltd.
InventorsMorimichi WATANABE, Hiroshi FUKUI
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Abstract
Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution and the crystal defect density on at least one surface of the semiconductor film is 1.0×106/cm2 or less.
Claims7
A semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, wherein at least one surface of the semiconductor film has a crystal defect density of 1.0×106/cm2 or less.
Dependencies are inferred from the claim text.