Group iii nitride laminate, semiconductor element, and method for producing group iii nitride laminate
AssigneesSciocs Company Limited, Sumitomo Chemical Company, Limited
InventorsHajime FUJIKURA, Taichiro KONNO, Takeshi KIMURA, Osamu GOTO
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Abstract
Provided is a group III nitride laminate for improving device characteristics, including: an underlying substrate; a first layer that is formed on the underlying substrate and is made of aluminum nitride; and a second layer that is formed on the first layer and is made of gallium nitride, wherein the first layer has a thickness of more than 100 nm and 1 μm or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.
Claims11
A group III nitride laminate, comprising:
- an underlying substrate,
- a first layer including aluminum nitride provided on the underlying substrate, and
- a second layer including gallium nitride provided on the first layer;
- wherein, in the first layer, a thickness is more than 100 nm and 1 μm or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.
A group III nitride laminate, comprising:
- an underlying substrate, and
- a first layer including aluminum nitride provided on the underlying substrate,
- wherein, in the first layer, a thickness is more than 100 nm and 1 μm or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.
A method of producing a group III nitride laminate, comprising:
- forming a first layer including aluminum nitride on an underlying substrate,
- performing a heat treatment of the first layer under an atmosphere containing hydrogen gas, and
- forming a second layer including gallium nitride on the first layer;
- wherein, in formation of the first layer, the first layer is formed so that a full width at half maximum of (0002) diffraction of the first layer determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction of the first layer determined through X-ray rocking curve analysis is 500 seconds or less, while a thickness of the first layer is more than 100 nm and 1 μm or less.
Dependencies are inferred from the claim text.