Silicon carbide diode with reduced voltage drop, and manufacturing method thereof

A method for manufacturing an electronic device, comprising:

• providing a solid body of silicon carbide having a surface and having a first conductivity type;
• forming in the solid body, by implantation of doping agents having a second conductivity type, a first implanted region and a second implanted region, which each extend in a direction starting from the surface and delimit between them a surface portion of the solid body, the solid body including an epitaxial layer including the surface portion and a bulk portion, the surface portion extending over the bulk portion;
• forming Schottky-contact metal portions on the surface and in direct contact with the surface portion;
• and
• forming ohmic-contact metal portions on the surface and in direct contact with the first and second implanted regions;
• and
• forming in the surface portion, by respective implantations of doping agents having the first conductivity type, a plurality of doped sub-regions which extend in succession one after another in the direction, each having a respective conductivity level higher than that of the bulk portion, the conductivity level of at least one of the doped sub-regions being different from the conductivity level of at least one other of the doped sub-regions.

A device, comprising:

• a semiconductor body having a first conductivity type, the semiconductor body including a bulk portion and an epitaxial layer on the bulk portion, the epitaxial layer having a surface;
• a first implanted region and a second implanted region, the first and second implanted regions having a second conductivity type and extending into the semiconductor body from the surface;
• first and second ohmic contacts on the surface and extending at least partially into the first and second implanted regions, respectively;
• a doped sub-region extending between the first and second implanted regions, the doped sub-region into the epitaxial layer from the surface and having the first conductivity type and a conductivity level higher than that of the bulk portion;
• and
• a metal layer on the epitaxial layer and on the first and second ohmic contacts, the metal layer in direct contact with the doped sub-region.