Semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKyunghwan Lee, Yongseok Kim, Hyuncheol Kim, Sungwon Yoo, Jaeho Hong
Life of this patent
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Abstract
A semiconductor device includes a gate electrode on a substrate, a channel surrounding sidewalls of the gate electrode on the substrate, and source/drain electrodes on the substrate at opposite sides of the gate electrode in a first direction parallel to an upper surface of the substrate. A thickness of the channel from the gate electrode to the source/drain electrodes in a horizontal direction parallel to the upper surface of the substrate is not constant but varies in a vertical direction perpendicular to the upper surface of the substrate.
Claims20
A semiconductor device comprising:
- a gate electrode on a substrate;
- a channel on the substrate, the channel surrounding sidewalls of the gate electrode;
- and
- source/drain electrodes on the substrate at opposite sides of the gate electrode in a first direction parallel to an upper surface of the substrate,
- wherein a thickness of the channel from the gate electrode to the source/drain electrodes in a horizontal direction is not constant but varies in a vertical direction, the horizontal direction being parallel to the upper surface of the substrate and the vertical direction being perpendicular to the upper surface of the substrate.
A semiconductor device comprising:
- a gate electrode on a substrate;
- a channel on the substrate, the channel surrounding sidewalls of the gate electrode;
- and
- source/drain electrodes on the substrate at opposite sides of the gate electrode in a first direction parallel to an upper surface of the substrate,
- wherein a distance in the first direction between the gate electrode and each of the source/drain electrodes is not constant but varies in a vertical direction perpendicular to the upper surface of the substrate.
A semiconductor device comprising:
- a gate electrode on a substrate;
- a channel on the substrate, the channel surrounding sidewalls of the gate electrode;
- source/drain electrodes on the substrate at opposite sides of the gate electrode in a first direction parallel to an upper surface of the substrate;
- a first contact plug on the gate electrode;
- second and third contact plugs on the source/drain electrodes, respectively;
- and
- first to third wirings contacting upper surfaces of the first to third contact plugs, respectively,
- wherein a thickness of the channel between the gate electrode and the source/drain electrodes in a horizontal direction is not constant but varies in a vertical direction and a thickness of each of the source/drain electrodes in the horizontal direction is not constant but varies in the vertical direction, the horizontal direction being parallel to the upper surface of the substrate and the vertical direction being perpendicular to the upper surface of the substrate, and
- wherein a distance in the horizontal direction between the first contact plug and each of the second and third contact plugs is greater than a minimum distance in the horizontal direction between the gate electrode and each of the source/drain electrodes.
Dependencies are inferred from the claim text.