Electrode/dielectric barrier material formation and structures
AssigneeMicron Technology, Inc.
InventorsSanket S. Kelkar, Christopher W. Petz, Dojun Kim, Matthew N. Rocklein, Brenda D. Kraus
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Abstract
Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.
Claims21
-20. (canceled)
An apparatus, comprising:
- a bottom electrode material of a storage node;
- a first titanium oxynitride (TiOxNy) barrier material formed on the bottom electrode material, wherein the first barrier material has a first oxygen content;
- a dielectric material formed on the first TiOxNy barrier material;
- a second TiOxNy barrier material, having a second oxygen content which is lower than the first oxygen content and formed on the dielectric material to increase an effective work function in a range of between 0.0 eV and 0.5 eV.
An apparatus, comprising:
- a bottom electrode material of a storage node;
- a dielectric material formed on the bottom electrode material;
- a multilayer barrier material having an oxygen content in a range of between 3-60 atomic % of the barrier material and formed on the dielectric material, wherein the multilayer barrier material comprises:
- a first layer having a first oxygen content and formed in contact with the dielectric material;
- and
- a second layer having a second oxygen content which is lower than the first oxygen content and formed on the first layer;
- and
- a top electrode formed on the multilayer barrier material and in contact with the second layer.
A method, comprising:
- forming a dielectric material of a semiconductor structure;
- and
- forming a titanium oxynitride (TiOxNy) material on the dielectric material, wherein the TiOxNy material has an oxygen content in a range of between 3-60 atomic % and is formed by:
- using a titanium tetrachloride (TiCl4) precursor over the dielectric material;
- using an ammonia (NH3) precursor;
- using a purging inert gas;
- repeating iterations of the TiCl4 precursor and the NH3 precursor;
- and
- using an oxygen precursor in alternating iterations with the TiCl4 precursor and the NH3 precursor.
Dependencies are inferred from the claim text.