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US 2022/0028967 A1Published application
Semiconductor device including a capacitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHong-Yang CHEN, Tian Sheng LIN, Yi-Cheng CHIU, Hung-Chou LIN, Yi-Min CHEN, Kuo-Ming WU, Chiu-Hua CHUNG
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Abstract
A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- an isolation insulating layer having an opening region;
- a first electrode disposed on the isolation insulating layer and surrounding the opening region of the isolation insulating layer in plan view;
- a dielectric layer disposed on the first electrode;
- and
- a second electrode disposed on the dielectric layer and surrounding the opening region of the isolation insulating layer in plan view.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- an isolation insulating layer having a ring-shape and comprising an outer periphery and an inner periphery defining an opening region;
- a first electrode disposed on the isolation insulating layer;
- a dielectric layer disposed on the first electrode;
- and
- a second electrode disposed on the dielectric layer, wherein:
- the semiconductor substrate includes:
- a first first-conductivity type diffusion region disposed below the isolation insulating layer;
- a first second-conductivity type diffusion region having a ring shape and surrounding the first first-conductivity type diffusion region;
- and
- a second second-conductivity type diffusion region having a ring shape and laterally extending from the first second-conductivity type diffusion region toward the opening region in plan view, and penetrate into the first first-conductivity type diffusion region below the isolation insulating layer.
8 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- an isolation insulating layer having a ring-shape having an opening region;
- a first electrode having a ring shape and disposed on the isolation insulating layer;
- a dielectric layer disposed on the first electrode;
- a second electrode having a ring shape and disposed on the dielectric layer;
- and
- a resistor electrically connected to the first electrode and a fixed potential and surrounding the first and second electrodes.
4 more elements
Dependencies are inferred from the claim text.