US 2022/0028918 A1Published application

Imaging device

AssigneePanasonic Intellectual Property Management Co., Ltd.

InventorHIROAKI IIJIMA

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Abstract

An imaging device includes a semiconductor substrate, a first pixel, and second pixels adjacent to the first pixel. Each of the first pixel and the second pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. When the imaging device is viewed in a normal direction of the semiconductor substrate, a smallest distance of distances between the first plug in the first pixel and the first plugs in the respective second pixels is smaller than a smallest distance of distances between the first plug in the first pixel and the second plugs in the first pixel and the respective second pixels.

Claims18

Dependent claims

An imaging device comprising:

a semiconductor substrate;
a first pixel;
and
second pixels that are adjacent to the first pixel, wherein
each of the first pixel and the second pixels includes:
a first photoelectric conversion layer that converts light having a wavelength included in a first wavelength range into first charge;
a first pixel electrode that collects the first charge;
a first plug that electrically connects the semiconductor substrate and the first pixel electrode;
a second photoelectric conversion layer that is arranged above the first photoelectric conversion layer or between the first photoelectric conversion layer and the semiconductor substrate in a normal direction of the semiconductor substrate and that converts light in a wavelength included in a second wavelength range into second charge;
a second pixel electrode that collects the second charge;
and
a second plug that electrically connects the semiconductor substrate and the second pixel electrode, and,
when viewed in the normal direction of the semiconductor substrate, a smallest distance of distances between the first plug in the first pixel and a plurality of first plugs in the second pixels is smaller than a smallest distance of distances between the first plug in the first pixel and a plurality of second plugs in the first pixel and the second pixels, each of the plurality of first plugs being the first plug in a corresponding one of the second pixels, each of the plurality of second plugs being the second plug in the first pixel or the second plug in a corresponding one of the second pixels.

10 more elements

An imaging device comprising:

a semiconductor substrate;
two first pixels that are adjacent to each other;
and
a second pixel that is adjacent to each of the two first pixels, wherein
each of the two first pixels includes
a first photoelectric conversion layer that converts light having a wavelength included in a first wavelength range into first charge,
a first pixel electrode that collects the first charge, and
a first plug that electrically connects the semiconductor substrate and the first pixel electrode,
the second pixel includes
a second photoelectric conversion layer that converts light having a wavelength included in a second wavelength range into second charge,
a second pixel electrode that collects the second charge, and
a second plug that electrically connects the semiconductor substrate and the second pixel electrode, and,
when viewed in a normal direction of the semiconductor substrate, a distance between the first plug in one of the two first pixels and the first plug in the other of the two first pixels is smaller than a distance between the first plug in one of the two first pixels and the second plug in the second pixel.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/494,202Filed 5 Oct 2021
Priority: JP 2019-08652426 Apr 2019
Published: 27 Jan 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10F 39/1847
Infrared image sensors: multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
H10F 39/1825
Colour image sensors: multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
H10F 39/8033
Pixels having integrated switching, control, storage or amplification elements: photosensitive area
H10F 39/811
Constructional details of image sensors: interconnections