Composite substrate for fabricating iii-v photodetector arrays
AssigneesUniversity of Southern California, Californiia Institute of Technology, InPi, LLC
InventorsRehan Rashid KAPADIA, Khaled AHMED, Frank GREER
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Abstract
A method for forming a composite substrate containing layers of dissimilar materials is provided. The method includes a step of disposing a release layer over a base substrate where the base substrate is composed of a first material. A template layer is attached to the release layer. Characteristically, the template layer is composed of a second material and adapted to form a compound semiconductor device thereon.
Claims30
A method for forming a composite substrate containing layers of dissimilar materials, the method comprising:
- forming a release layer over a base substrate having a buffer layer, the base substrate being composed of a first material;
- attaching a metal template layer to the release layer, the metal template layer being composed of a Group III metal;
- depositing a capping layer over the metal template layer, the capping layer being composed of a dielectric material;
- patterning the metal template layer and the capping layer to form a first composite substrate including a first plurality of separated template units separated by a first plurality of trenches;
- annealing the first composite substrate in an ambient gas to form a second composite substrate wherein metal template layer is converted to a first crystalline semiconductor layer which is interposed between the buffer layer and the capping layer;
- and
- removing the capping layer to form a third composite substrate such that the first crystalline semiconductor layer is exposed.
A composite substrate comprising:
- a base substrate;
- a buffer layer disposed over the base substrate;
- a release layer disposed over the buffer layer;
- and
- a first crystalline semiconductor layer disposed over the release layer.
Dependencies are inferred from the claim text.