Memory device, semiconductor device and manufacturing method thereof

A memory device, comprising:

• a stacking structure, comprising isolation layers and word lines alternately stacked on a substrate, and extending along a first direction, wherein the stacking structure has staircase portions separately arranged along the first direction, each of the staircase portions has a width along a second direction intersected with the first direction, and the width of each staircase portion is less than a total width of the stacking structure along the second direction;
• a switching layer, covering a sidewall of the stacking structure;
• first channel layers, covering a sidewall of the switching layer that is facing away from the stacking structure, and laterally spaced apart from one another along the first direction;
• and
• pairs of conductive pillars, standing on the substrate and in lateral contact with the switching layer through the first channel layers, wherein the conductive pillars of each pair are laterally separated from each other along the first direction, and adjacent pairs of the conductive pillars are laterally separated along the first direction as well.

A semiconductor device, comprising:

• a substrate;
• a stacking structure, comprising isolation layers and word lines alternately stacked on the substrate, and extending along a first direction, wherein the stacking structure has a staircase portion and a connection portion at an edge region of the stacking structure, the connection portion extends along the staircase portion, and is in lateral contact with the staircase portion;
• a switching layer, covering a sidewall of the stacking structure;
• channel layers, covering a sidewall of the switching layer that is facing away from the stacking structure, and laterally spaced apart from one another along the first direction;
• pairs of conductive pillars, standing on the substrate and in lateral contact with the switching layer through the channel layers, wherein the conductive pillars of each pair are laterally separated from each other along the first direction, and adjacent pairs of the conductive pillars are laterally separated along the first direction as well;
• word line drivers, disposed below the substrate;
• and
• word line routings, extending from steps of the staircase portion of the stacking structure to the word line drivers through the substrate.