Semiconductor devices including a contact structure that contacts a dummy channel structure
AssigneeSamsung Electronics Co., Ltd.
InventorsJoo Won Park, Kyeong Jin Park, Kwang Soo Kim
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Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
Claims19
A semiconductor device comprising:
- a substrate having a cell region and a connection region adjacent to the cell region;
- a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate;
- a source mold layer between the substrate and the stacked structure in the connection region;
- an alternate conductive line between the substrate and the stacked structure in the cell region;
- a plurality of cell channel structures in the cell region, the plurality of cell channel structures extending into the alternate conductive line while passing through the stacked structure;
- a plurality of dummy channel structures in the connection region, the plurality of dummy channel structures extending into the source mold layer while passing through the stacked structure;
- and
- a contact structure that is among the plurality of dummy channel structures in the connection region while being in direct contact with one of the plurality of electrode layers,
- wherein each of the plurality of cell channel structures comprises:
- a channel pattern, and
- an information storage pattern outside the channel pattern,
- wherein the channel pattern is electrically connected to the alternate conductive line,
- wherein each of the plurality of dummy channel structures comprises:
- a dummy channel pattern, and
- a dummy information storage pattern outside the dummy channel pattern,
- wherein the dummy channel pattern is not electrically connected to the alternate conductive line.
A semiconductor device comprising:
- a substrate having a cell region and a connection region adjacent to the cell region;
- a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate;
- a source mold layer between the substrate and the stacked structure in the connection region;
- an alternate conductive line between the substrate and the stacked structure in the cell region;
- a plurality of cell channel structures in the cell region, the plurality of cell channel structures extending into the alternate conductive line while passing through the stacked structure;
- a plurality of dummy channel structures in the connection region, the plurality of dummy channel structures extending into the source mold layer while passing through the stacked structure;
- and
- a contact structure that is among the plurality of dummy channel structures in the connection region while being in direct contact with one of the plurality of electrode layers,
- wherein each of the plurality of cell channel structures comprises a channel pattern electrically connected to the alternate conductive line,
- wherein each of the plurality of dummy channel structures comprises a dummy channel pattern,
- wherein the dummy channel pattern is not electrically connected to the alternate conductive line.
Dependencies are inferred from the claim text.