Structures for testing nanoscale devices including ferroelectric capacitors and methods for forming the same

A method of forming a ferroelectric device structure, comprising:

• forming an array of field effect transistors over a substrate;
• forming an array of ferroelectric capacitors over the array of field effect transistors, wherein each of the ferroelectric capacitors comprises a respective first electrode, a respective ferroelectric material plate, and a respective second electrode, and each ferroelectric capacitor within the array of ferroelectric capacitors is formed directly on a top surface of a respective gate electrode of a respective field effect transistor within the array of field effect transistors;
• forming a first metal pad embedded in a dielectric material layer over the array of ferroelectric capacitors, wherein the first metal pad is electrically connected to each gate electrode within the array of field effect transistors;
• and
• forming a second metal pad embedded in the dielectric material layer over the array of ferroelectric capacitors, wherein the second metal pad is electrically connected to each second electrode within the array of ferroelectric capacitors.

A method of forming ferroelectric device structure, comprising:

• forming an array of field effect transistors over on a substrate;
• forming an array of ferroelectric capacitors over the array of field effect transistors, wherein each of the ferroelectric capacitors comprises a respective first electrode, a respective ferroelectric material plate, and a respective second electrode;
• forming an array of gate-electrode-contact metal via structures on a respective gate electrode in the array of field effect transistors;
• forming an array of ferroelectric-electrode-contact metal via structures on a respective second electrode in the array of ferroelectric capacitors;
• forming a first metal pad electrically connected to each gate-electrode-contact metal via structure within the array of gate-electrode-contact metal via structures;
• and
• forming a second metal pad electrically connected to each ferroelectric-electrode-contact metal via structure within the array of ferroelectric-electrode-contact metal via structures.