FeRAM with Laminated Ferroelectric Film and Method Forming Same

A device comprising:

• a Ferroelectric Random Access Memory (FeRAM) cell comprising:
• a bottom electrode;
• a laminate ferroelectric layer comprising:
• a first amorphous ferroelectric layer over the bottom electrode;
• a first polycrystalline ferroelectric layer over the first amorphous ferroelectric layer;
• a second amorphous ferroelectric layer over the first polycrystalline ferroelectric layer;
• and
• a second polycrystalline ferroelectric layer over the second amorphous ferroelectric layer;
• and
• a top electrode over the second polycrystalline ferroelectric layer.

A device comprising:

• a bottom electrode;
• a first plurality of ferroelectric layers over the bottom electrode, wherein the first plurality of ferroelectric layers are formed of first materials having first crystallization temperatures;
• a second plurality of ferroelectric layers over the bottom electrode, wherein the first plurality of ferroelectric layers and the second plurality of ferroelectric layers are stacked alternatingly, and wherein the second plurality of ferroelectric layers are formed of second materials having second crystallization temperatures, and the second crystallization temperatures are lower than the first crystallization temperatures;
• and
• a top electrode over the first plurality of ferroelectric layers and the second plurality of ferroelectric layers.