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US 2022/0028870 A1Published application
Atomic layer deposition of iii-v compounds to form v-nand devices
AssigneeASM IP Holding B.V.
InventorsTom E. Blomberg, Varun Sharma, Jan Willem Maes
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Abstract
A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.
Claims20
A method of forming a channel layer for use in a V-NAND device comprising:
- providing a substrate, the substrate having an opening;
- after providing the substrate, depositing a first material comprising a compound semiconductor material by atomic layer deposition in the opening, wherein the atomic layer deposition of the first material comprises using an alkylsilyl-compound of antimony or arsenic as a precursor;
- and
- filling a remaining portion of the opening with a second material,
- wherein the first material comprises at least one of:
- gallium antimonide (GaSb);
- gallium arsenide (GaAs);
- indium antimonide (InSb);
- indium gallium arsenide (InGaAs);
- or a combination of aluminum, gallium, or indium with arsenide or antimony.
7 more elements
A method of forming a device comprising:
- providing a substrate, the substrate having an opening comprising a surface in the opening;
- pretreating the surface using a cyclic pretreatment comprising a first pulse and a second pulse, wherein the first pulse comprises a combination of a metal reactant and a non-metal reactant;
- after the pretreating, depositing, using atomic layer deposition or cyclic chemical vapor deposition, a first material inside the opening;
- pre-stabilizing the substrate, wherein the pre-stabilizing comprises waiting a period of time after completion of the pretreating before commencing the depositing;
- and
- filling a remaining portion of the opening with a second material.
3 more elements
A method of forming a channel layer for use in a device comprising:
- providing a substrate, the substrate having an opening;
- depositing a first material comprising a compound semiconductor material by atomic layer deposition in the opening;
- and
- filling a remaining portion of the opening with a second material,
- wherein the first material comprises at least one of:
- gallium antimonide (GaSb);
- indium antimonide (InSb);
- and indium gallium arsenide (InGaAs);
- and
- wherein the first material is polycrystalline.
7 more elements
Dependencies are inferred from the claim text.