Methods of manufacturing dynamic random access memory
AssigneeWinbond Electronics Corp.
InventorsYoshinori Tanaka, Wei-Che Chang, Kai Jen
Life of this patent
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Abstract
A method of manufacturing a dynamic random access memory including the following steps is provided. A bit line is formed on a substrate. A sidewall structure is formed on a sidewall of the bit line. The sidewall structure includes a first insulation layer, a second insulation layer, and a shield conductor layer. The first insulation layer is disposed on the sidewall of the bit line. The second insulation layer is disposed on the first insulation layer. The shield conductor layer is disposed between the first insulation layer and the second insulation layer. An interconnection structure electrically connected to the shield conductor layer is formed.
Claims7
A method of manufacturing a dynamic random access memory, comprising:
- forming a bit line on a substrate;
- forming a sidewall structure on a sidewall of the bit line, wherein the sidewall structure comprises:
- a first insulation layer, disposed on the sidewall of the bit line;
- a second insulation layer, disposed on the first insulation layer;
- and
- a shield conductor layer, disposed between the first insulation layer and the second insulation layer;
- and
- forming an interconnection structure electrically connected to the shield conductor layer.
Dependencies are inferred from the claim text.