Array Of Capacitors And Method Used In Forming An Array Of Capacitors

A method used in forming an array of capacitors, comprising:

• forming an array of vertically-elongated first capacitor electrodes through sacrificial material, the first capacitor electrodes projecting vertically relative to the sacrificial material;
• forming insulative material against tops and sidewalls of vertically-projecting portions of the first capacitor electrodes and against a top of the sacrificial material that is laterally-among the first capacitor electrodes, the insulative material being horizontally-continuous within and less-than-filling void space that is laterally-among the vertically-projecting portions of the first capacitor electrodes;
• etching the insulative material to remove it from being horizontally-continuous within the void space to form insulative rings around vertically-projecting portions of the first capacitor electrodes, individual of the insulative rings being around individual of the vertically-projecting portions of the first capacitor electrodes, the insulative rings around immediately-adjacent of the first capacitor electrodes in a first straight-line direction being laterally directly against one another, the insulative rings around immediately-adjacent of the first capacitor electrodes in a second straight-line direction that is angled relative to the first straight-line direction being laterally-spaced from one another by an opening through the insulative material;
• etching the sacrificial material through the openings that are individually laterally-between the immediately-adjacent first capacitor electrodes along the second straight-line direction;
• forming a capacitor insulator over sidewalls of the first capacitor electrodes;
• and
• forming at least one second capacitor electrode over the capacitor insulator.

A method used in forming an array of capacitors, comprising:

• forming an array of vertically-elongated first capacitor electrodes projecting vertically relative to an outer surface within an array area;
• forming insulative material over sidewalls of vertically-projecting portions of the first capacitor electrodes, void space being vertically between a top of the sacrificial material and a bottom of the insulative material within the array area, the insulative material comprising insulative rings around the vertically-projecting portions of the first capacitor electrodes, individual of the insulative rings being around individual of the vertically-projecting portions of the first capacitor electrodes, the insulative rings around immediately-adjacent of the first capacitor electrodes in a first straight-line direction being laterally directly against one another, the insulative rings around immediately-adjacent of the first capacitor electrodes in a second straight-line direction that is angled relative to the first straight-line direction being laterally-spaced from one another;
• forming a capacitor insulator over sidewalls of the first capacitor electrodes;
• and
• forming at least one second capacitor electrode over the capacitor insulator.