US 2022/0028858 A1 · 3D ARCHITECTURE OF TERNARY CONTENT-ADDRESSABLE MEMORY METHOD FOR THE SAME

Abstract

Disclosed is a 3D architecture of ternary content-addressable memory (TCAM), comprising a first transistor layer, a second transistor layer, a third transistor layer and a fourth transistor layer. The first transistor layer and the second transistor layer are disposed on a first plane. The third transistor layer and the fourth transistor layer are respectively stacked on the first transistor layer and the second transistor layer in a second direction perpendicular to the first plane. Two of the first transistor layer, the second transistor layer, the third transistor layer and the fourth transistor layer are a first transistor and a second transistor of a first memory cell of the TCAM. The other two of the first transistor layer, the second transistor layer, the third transistor layer and the fourth transistor layer are a first transistor and a second transistor of a second memory cell of the TCAM.

Claims16

Dependent claims

A 3D architecture of ternary content-addressable memory (TCAM), comprising:

a first transistor layer, disposed on a first plane, and extending in a first direction parallel to the first plane;
a second transistor layer, disposed on the first plane, parallel to the first transistor layer, and extending in the first direction;
a third transistor layer, stacked on the first transistor layer in a second direction perpendicular to the first plane;
and
a fourth transistor layer, stacked on the second transistor layer in the second direction,
wherein two of the first transistor layer, the second transistor layer, the third transistor layer and the fourth transistor layer are a first transistor and a second transistor of a first memory cell of the TCAM, and the other two of the first transistor layer, the second transistor layer, the third transistor layer and the fourth transistor layer are a first transistor and a second transistor of a second memory cell of the TCAM.

3 more elements

A 3D architecture of ternary content-addressable memory (TCAM), comprising:

a first transistor channel layer, disposed on a first plane, and extending in a first direction parallel to the first plane;
a second transistor channel layer, disposed on the first plane, parallel to the first transistor channel layer, and extending in the first direction;
a third transistor channel layer, stacked on the first transistor channel layer in a second direction perpendicular to the first plane;
and
a fourth transistor channel layer, stacked on the channel second transistor layer in the second direction,
wherein the first transistor channel layer and the third transistor channel layer belong to a first transistor of a memory cell of the TCAM, and the second transistor channel layer, and the fourth transistor channel layer belong to a second transistor of the memory cell of the TCAM.

3 more elements

Dependencies are inferred from the claim text.

3d architecture of ternary content-addressable memory method for the same

Life of this patent

3d architecture of ternary content-addressable memory method for the same

Life of this patent

Abstract

Claims16