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US 2022/0028855 A1Published application
Semiconductor structure and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorsJisong JIN, Abraham YOO
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Abstract
Semiconductor structures and fabrication methods are provided. The semiconductor structure includes a substrate including a first region; a first polarization layer on the first region; and a first gate structure on the first polarization layer. A material of the first polarization layer includes a semiconductor compound material containing first polarization atoms.
Claims20
A semiconductor structure, comprising:
- a substrate including a first region;
- a first polarization layer on the first region, wherein a material of the first polarization layer includes a semiconductor compound material containing first polarization atoms;
- and
- a first gate structure on the first polarization layer.
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A method for fabricating a semiconductor structure, comprising:
- providing a substrate including a first region;
- forming a first polarization layer on the first region, wherein a material of the first polarization layer includes a semiconductor compound material consisting first polarization atoms;
- and
- forming a first gate structure on the first polarization layer.
1 more element
Dependencies are inferred from the claim text.