Micro led device and manufacturing method thereof

A method for producing a micro-LED device, comprising:

• providing a multilayer stack which includes
• a frontplane supported by a crystal growth substrate, the frontplane including a plurality of micro-LEDs, each of which includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, and a device isolation region located between the plurality of micro-LEDs, the device isolation region including at least one metal plug electrically coupled with the second semiconductor layer, and
• a middle layer supported by the frontplane, the middle layer including a plurality of first contact electrodes respectively electrically coupled with the first semiconductor layer of the plurality of micro-LEDs and at least one second contact electrode coupled with the metal plug;
• and
• forming a backplane on the multilayer stack, the backplane including an electric circuit electrically coupled with the plurality of micro-LEDs via the plurality of first contact electrodes and the at least one second contact electrode, the electric circuit including a plurality of thin film transistors,
• wherein providing the multilayer stack includes forming in the device isolation region a reflector capable of reflecting light radiated from each of the plurality of micro-LEDs such that the reflected light travels toward one or both of the crystal growth substrate and the backplane, and
• forming the backplane includes
• depositing a semiconductor layer on the multilayer stack, and
• patterning the semiconductor layer deposited on the multilayer stack.