Circuitry and Method of Forming a Circuitry
AssigneeInfineon Technologies AG
InventorsRobert Fehler, Sergey Yuferev
Life of this patent
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Abstract
A circuitry is provided. The circuitry may include a power stage including a first transistor and a second transistor, an encapsulation including encapsulation material encapsulating the power stage, wherein the first transistor and the second transistor are arranged in an L-shape with respect to each other along their long axes, and a passive electronic component arranged on or embedded within the encapsulation at least partially, in top view, within a rectangular area defined by the L-shape configuration and further next to the first transistor and next to the second transistor.
Claims28
A circuitry comprising:
- a power stage comprising a first transistor and a second transistor;
- an encapsulation comprising encapsulation material encapsulating the power stage;
- wherein the first transistor and the second transistor are arranged in an L-shape with respect to each other along their long axes
- a passive electronic component arranged on or embedded within the encapsulation at least partially, in top view, within a rectangular area defined by the L-shape configuration and further next to the first transistor and next to the second transistor.
A circuitry comprising:
- a power stage comprising a first transistor and a second transistor;
- encapsulation comprising encapsulation material encapsulating the power stage;
- wherein the first transistor and the second transistor are arranged in an L-shape with respect to each other along their long axes
- a passive electronic component arranged on or embedded within the encapsulation in an orientation angle in the range from about 45° to about 135°, wherein the orientation angle is an angle between a symmetry line along the short edge of the passive component and a connection line crossing a top view center of the first transistor and a top view center of the second transistor.
Method of forming a circuitry, the method comprising:
- forming a power stage, comprising arranging a first transistor and a second transistor in an L-shape with respect to each other along their long axes;
- encapsulating the power stage with an encapsulation material;
- and
- arranging a passive electronic component on the encapsulation material or embedding the passive electronic component within the encapsulation at least partially, such that the passive electronic component is, in top view, within a rectangular area defined by the L-shape configuration and further next to the first transistor and next to the second transistor.
A method of forming a circuitry comprising:
- forming a power stage, comprising arranging a first transistor and a second transistor in an L-shape with respect to each other along their long axes;
- encapsulating the power stage with an encapsulation material;
- and
- arranging a passive electronic component on the encapsulation material or embedding the passive electronic component within the encapsulation at least partially, such that the passive electronic component is arranged in an orientation angle in the range from about 45° to about 135°, wherein the orientation angle is an angle between a symmetry line along the short edge of the passive component and a connection line crossing a top view center of the first transistor and a top view center of the second transistor.
Dependencies are inferred from the claim text.