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US 2022/0028839 A1Published application
Method of manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorYosuke NAKATA
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AssigneeMitsubishi Electric Corporation
InventorYosuke NAKATA
Estimating the term…
An object of the present disclosure is to provide a method of manufacturing a semiconductor device capable of suppressing an electrostatic breakdown in a configuration including a semiconductor element with a sense cell part. A method of manufacturing a semiconductor device according to the present disclosure includes: bonding each of semiconductor elements 1 and a relay substrate on a conductor plate; connecting each of signal pads of each of the semiconductor elements and each of control pads of the relay substrate by a wire; bonding a first electrode material on each of the semiconductor elements; bonding a second electrode material on the relay substrate; sealing the conductor plate, each of the semiconductor elements, the relay substrate, the first electrode material, and the second electrode material by a sealing resin; and grinding the sealing resin and removing the shorting part to expose part of the second electrode material.
A method of manufacturing a semiconductor device which includes:
A method of manufacturing a semiconductor device including a semiconductor element which has a main cell part and at least one sense cell part and is provided with a plurality of signal pads corresponding to the main cell part and the sense cell part, respectively, the method comprising:
Dependencies are inferred from the claim text.