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US 2022/0028810 A1Published application
Semiconductor structure and method for forming semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorPING-HENG WU
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Abstract
A semiconductor structure and a forming method thereof are provided. The method of forming the semiconductor structure includes: providing a wafer having a front surface and a back surface opposite to the front surface; patterning the back surface of the wafer to form a groove extending from the back surface towards the front surface; forming a dielectric layer at a bottom and a side wall of the groove; and forming, on the dielectric layer, a conductive layer filling the groove.
Claims13
A method for forming a semiconductor structure, comprising:
- providing a wafer having a front surface and a back surface opposite to the front surface;
- patterning the back surface of the wafer to form at least one groove extending from the back surface towards the front surface;
- forming a dielectric layer at a bottom and a side wall of the groove;
- and
- forming, on the dielectric layer, a conductive layer filling the groove.
2 more elements
A semiconductor structure, comprising:
- a wafer having a front surface and a back surface opposite to the front surface;
- at least one groove located in the wafer and extending from the back surface towards the front surface;
- a dielectric layer covering a bottom and a side wall of the groove;
- and
- a conductive layer, located on a side of the dielectric layer away from the wafer and filling the groove.
2 more elements
Dependencies are inferred from the claim text.