Method of making an individualization zone of an integrated circuit
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsNicolas POSSEME, Stefan LANDIS
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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsNicolas POSSEME, Stefan LANDIS
Estimating the term…
The invention relates to a method for making an individualization zone of a microchip comprising a first (10A) and a second (20A) level of electrical tracks (10, 20), and a level of interconnections (30A) comprising vias (30), the method comprising the following steps: providing the first level (10A) and a dielectric layer (200, 201, 202), making a hard metal mask (300) on the dielectric layer (200, 201, 202), etching the dielectric layer (200, 201, 202) through the mask openings (301) by etching based on fluorinated chemistry, preferably oxidizing the hard metal mask (300) by hydrolysis so as to form randomly distributed residues (31) at certain openings (320R), filling the openings (320, 320R) so as to form at least the vias (30) of the level of interconnections (30A), said vias (30) comprising functional vias (30OK) at the openings without residues (320) and inactive vias (30KO) at the openings with residues (320R).
1-15. (canceled)
A method for making an individualization zone of a microelectronic chip, said chip comprising at least:
A microelectronic device comprising at least one integrated circuit, the integrated circuit comprising at least an individualization zone and a functional zone, separate from each other, the individualization zone and the functional zone comprising
Dependencies are inferred from the claim text.