Bottom Barrier Free Interconnects Without Voids
AssigneeInternational Business Machines Corporation
InventorsKenneth Chun Kuen Cheng, Koichi Motoyama, Kisik Choi, Cornelius Brown Peethala, Hosadurga Shobha, Joe Lee
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Abstract
Bottom barrier free interconnects are provided. In one aspect, an interconnect structure includes: metal lines embedded in a dielectric; an interlayer dielectric (ILD) disposed over the metal lines; interconnects formed in the ILD on top of the metal lines; a barrier layer separating the interconnects from the ILD, wherein the barrier layer is absent in between the interconnects and the metal lines; and a selective capping layer disposed on the interconnects.
Claims20
An interconnect structure, comprising:
- metal lines embedded in a dielectric;
- an interlayer dielectric (ILD) disposed over the metal lines;
- interconnects formed in the ILD on top of the metal lines;
- a barrier layer separating the interconnects from the ILD, wherein the barrier layer is absent in between the interconnects and the metal lines;
- and
- a selective capping layer disposed on the interconnects.
An interconnect structure, comprising:
- metal lines embedded in a dielectric;
- an interlayer dielectric (ILD) disposed over the metal lines;
- interconnects formed in the ILD on top of the metal lines, wherein the interconnects comprise a conductor selected from the group consisting of:
- cobalt (Co), ruthenium (Ru), and combinations thereof;
- a barrier layer separating the interconnects from the ILD, wherein the barrier layer is absent in between the interconnects and the metal lines;
- a selective capping layer disposed on the interconnects;
- and
- a blanket capping layer over the interconnects and the ILD.
Dependencies are inferred from the claim text.