Semiconductor structure and forming method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorsPING-HENG WU, Chih-Wei Chang
Life of this patent
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Abstract
A semiconductor structure and a forming method thereof are provided. The forming method of the semiconductor structure includes that: a wafer having a front surface and a back surface is provided, a conductive plug being provided in the wafer, the conductive plug extending from the front surface to the back surface and the conductive plug having a bottom surface located in the wafer; an etching process is performed on the back surface of the wafer to form a groove exposing at least the bottom surface of the conductive plug; and a functional layer covering the bottom surface of the conductive plug is formed.
Claims14
A forming method of a semiconductor structure, comprising:
- providing a wafer having a front surface and a back surface, a conductive plug being provided in the wafer, the conductive plug extending from the front surface to the back surface and the conductive plug having a bottom surface located in the wafer;
- performing an etching process on the back surface of the wafer to form a groove exposing at least the bottom surface of the conductive plug;
- and
- forming a functional layer covering the bottom surface of the conductive plug.
A semiconductor structure, comprising:
- a wafer having a front surface and a back surface, a conductive plug being provided in the wafer, the conductive plug extending from the front surface to the back surface and the conductive plug having a bottom surface located in the wafer;
- a groove, having a top opening located on a plane where the back surface of the wafer is and exposing at least the bottom surface of the conductive plug;
- and
- a functional layer, covering the bottom surface of the conductive plug.
Dependencies are inferred from the claim text.