Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin film
AssigneesSamsung Electronics Co., Ltd., Ajou University Industry-Academic Cooperation Foundation
InventorsYoungjae KANG, SangWoon LEE, Joungeun YOO, Duseop YOON
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Abstract
A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm: Mn+1AXn Formula 1 In Formula 1, M, A, X, and n are as described in the specification.
Claims30
A semiconductor interconnect, comprising:
- a thin film that includes a multielement compound represented by Formula 1, wherein the thin film has a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm,
- Mn+1AXn Formula 1
- wherein in Formula 1,
- M includes at least one transition metal selected from elements of periodic table groups 3, 4, 5, and 6,
- A includes at least one element selected from elements of periodic table groups 12, 13, 14, 15, and 16,
- X is carbon (C), nitrogen (N), or any combination thereof, and
- n is 1, 2, or 3.
An electrode for a semiconductor device, the electrode comprising:
- a thin film including a multielement compound represented by Formula 1, wherein the thin film has a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:
- Mn+1AXn Formula 1
- wherein in Formula 1,
- M includes at least one transition metal selected from elements of periodic table groups 3, 4, 5, and 6,
- A comprises at least one element selected from elements of periodic table groups 12, 13, 14, 15, and 16,
- X is carbon (C), nitrogen (N), or any combination thereof, and
- n is 1, 2, or 3.
A method of preparing a multielement compound thin film, the method comprising:
- preparing a substrate;
- and
- forming a multielement compound thin film represented by Formula 1 and epitaxially grown on one surface of the substrate by deposition, wherein the multielement compound thin film has a thickness equal to or less than about 50 nm, and a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:
- Mn+1AXn Formula 1
- wherein in Formula 1,
- M includes at least one transition metal selected from elements of periodic table groups 3, 4, 5, and 6,
- A comprises at least one element selected from elements of periodic table groups 12, 13, 14, 15, and 16,
- X is carbon (C), nitrogen (N), or any combination thereof, and
- n is 1, 2, or 3.
A device, comprising:
- a thin film that includes a multielement compound represented by Formula 1, wherein the thin film has a thickness between about 6 nm and about 42 nm and a resistivity between about 40 μΩ·cm to about 50 μΩ·cm,
- Mn+1AXn Formula 1
- wherein in Formula 1,
- M includes at least one transition metal selected from elements of periodic table groups 3, 4, 5, and 6,
- A includes at least one element selected from elements of periodic table groups 12, 13, 14, 15, and 16,
- X is carbon (C), nitrogen (N), or any combination thereof, and
- n is 1, 2, or 3.
Dependencies are inferred from the claim text.