Semiconductor device and method for forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., Tsmc Nanjing Company, Limited, Tsmc China Company Limited
InventorsZhang-Ying YAN, Xin-Yong WANG
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Abstract
A semiconductor device includes a substrate, an active region, an isolation structure, a first metal line, gate structure, source/drain region, a source/drain contact, and a second metal line. The active region protrudes from a top surface of the substrate. The isolation structure is over the substrate and laterally surrounds the active region. The first metal line is in the isolation structure. The gate structure is over the active region. The source/drain region is in the active region. The source/drain contact is over the active region and is electrically connected to the source/drain region. The second metal line is over the gate structure and the source/drain contact, in which the second metal line vertically overlaps the first metal line.
Claims20
A semiconductor device, comprising:
- a substrate;
- an active region protruding from a top surface of the substrate;
- an isolation structure over the substrate and laterally surrounding the active region;
- a first metal line in the isolation structure;
- a gate structure over the active region;
- a source/drain region in the active region;
- a source/drain contact over the active region and electrically connected to the source/drain region;
- and
- a second metal line over the gate structure and the source/drain contact, wherein the second metal line vertically overlaps the first metal line.
A semiconductor device, comprising:
- a substrate;
- a first metal line over the substrate, wherein a bottom surface of the first metal line is spaced from a top surface of the substrate;
- a first conductive via and a second conductive via over the substrate and the first metal line, wherein the first conductive via and the second conductive via are in contact with the first metal line;
- a plurality of gate structures over the substrate and the first and second conductive vias;
- a plurality of source/drain regions over the substrate and the first and second conductive vias, wherein the source/drain regions are on opposite sides of each of the gate structures, respectively;
- and
- a plurality of source/drain contacts over the substrate, wherein the source/drain contacts are adjacent to the gate structures and overlie the source/drain regions, respectively.
A method, comprising:
- forming an active region protruding from a top surface of a substrate;
- forming a first dielectric layer over the substrate and laterally surrounding the active region;
- forming a first metal line over the first dielectric layer,
- forming a second dielectric layer over the substrate and covering first metal line;
- patterning the second dielectric layer to form an opening in the second dielectric layer, wherein the opening exposes a top surface of the first metal line;
- forming a first conductive via in the opening;
- forming a gate structure over the active region;
- and
- forming a source/drain contact over a source/drain region in the active region.
Dependencies are inferred from the claim text.