Method for manufacturing semiconductor device
AssigneeNanya Technology Corporation
InventorsCHIANG-LIN SHIH, PEI-JHEN WU
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AssigneeNanya Technology Corporation
InventorsCHIANG-LIN SHIH, PEI-JHEN WU
Estimating the term…
A method for manufacturing a semiconductor device includes preparing a first group of wafers having a plurality of first semiconductor dies embedded in a first photosensitive material layer; forming a plurality of first through vias in the first photosensitive material layer; attaching at least two of the first group of wafers using a first adhesive layer to form a first structure; preparing a second group of wafers having a plurality of second semiconductor dies embedded in a second photosensitive material layer; forming a plurality of second through vias in the second photosensitive material layer; attaching at least two of the second group of wafers using a second adhesive layer to form a second structure; and connecting the first structure to the second structure with a plurality of first metal bumps.
A method for manufacturing a semiconductor device, comprising:
The method of claim 2, wherein at least one of the second through vias is vertically aligned with a corresponding first through via, the first through vias are formed in a peripheral region of the first semiconductor dies, and the second through vias are formed in a peripheral region of the second semiconductor dies.
Dependencies are inferred from the claim text.