Backside power distribution network (pdn) processing

Abstract

Disclosed is a semiconductor die with a through substrate via (TSV) structure having improved electrical characteristics suitable for backside power distribution networks (PDNs), and a method for making same. According to some aspects, a semiconductor die includes a substrate having a front side and a back side and includes a TSV extending from the back side of the substrate towards the front side of the substrate. The TSV includes a first portion extending from the back side of the substrate towards the front side of the substrate and having a first cross sectional area and a second portion extending from the first portion towards the front side of the substrate and having a second cross sectional area smaller than the first cross sectional area. A conductor is disposed within the TSV. According to some aspects, the first portion of the TSV is trench structure.

Dependencies are inferred from the claim text.